4
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
Figure 1. MRF7S19170HR3(HSR3) Test Circuit Schematic
Z12 0.060″
x 0.420″
Microstrip
Z13* 0.197″
x 0.083″
Microstrip
Z14* 0.332″
x 0.083″
Microstrip
Z15* 0.158″
x 0.083″
Microstrip
Z16* 0.572″
x 0.083″
Microstrip
Z17, Z18 0.063″
x 0.220″
Microstrip
Z19 0.160″
x 0.083″
Microstrip
Z20, Z21 1.120″
x 0.080″
Microstrip
PCB Taconic TLX--0300, 0.030″,
εr
=2.5
* Variable for tuning
Z1* 0.588″
x 0.083″
Microstrip
Z2* 0.146″
x 0.083″
Microstrip
Z3* 0.068″
x 0.083″
Microstrip
Z4 0.865″
x 0.098″
Microstrip
Z5 0.154″
x 0.098″
Microstrip
Z6 0.271″
x 0.787″
Microstrip
Z7 1.410″
x 0.080″
Microstrip
Z8 0.194″
x 0.787″
Microstrip
Z9 0.115″
x 1.360″
Microstrip
Z10 0.230″
x 1.360″
Microstrip
Z11 0.185″
x 1.120″
Microstrip
VBIAS
VSUPPLY
RF
Z19
OUTPUT
RF
INPUT
Z1
DUT
C5
C4
R1
Z2
Z3
Z4
C7
Z10
Z5
R2
Z7
R3
Z8
Z11
Z12
Z13
Z14
Z15
C1
Z6
Z16
C11
C10
C12
C13
C14
Z9
Z20
C8
C15
C16
C19
Z21
C9
C17
C18
+
C2
C6
C3
Z17
Z18
Table 5. MRF7S19170HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
1.8 pF Chip Capacitors
ATC100B1R8BT500XT
ATC
C3, C8, C9, C10, C11
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C4
100 pF Chip Capacitor
ATC100B101JT500XT
ATC
C5
100 nF Chip Capacitor
200B104MT
ATC
C6, C15, C16, C17, C18
10
μF Chip Capacitors
C5750X5R1H106MT
TDK
C7
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C12
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C13
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C14
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C19
470
μF, 63 V Electrolytic Capacitor, Axial
EKME630ELL471M12X25LL
United Chemi--Con
R1, R2
10 k?, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10
?, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
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功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19210HR5
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V 63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19210HSR3
功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V63W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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MRF7S21080HR3
功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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